Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation
نویسندگان
چکیده
This paper presents results of a new numerical treatment of 3D MOSFET simulation with nonplanar interfaces. The simulations have been carried out by MINIMOS 5 our fully three-dimensional simulation program. Three-dimensional effects like threshold shift for small channel devices , channel narrowing and the enhanced conductivity at the channel edge have been successfully modeled.
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عنوان ژورنال:
- IEEE Trans. on CAD of Integrated Circuits and Systems
دوره 9 شماره
صفحات -
تاریخ انتشار 1990